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UNISONIC TECHNOLOGIES CO., LTD UF740
10A, 400V, 0.55 OHM, N-CHANNEL POWER MOSFET
DESCRIPTION
The UF740 power MOSFET is designed for high voltage, high speed power switching applications such as switching power supplies, switching adaptors etc.
MOSFET
1 TO-220
FEATURES
* 10A, 400V, RDS(ON)(0.55) * Single Pulse Avalanche Energy Rated * Rugged - SOA is Power Dissipation Limited * Fast Switching
1
TO-220F
SYMBOL
2.Drain
*Pb-free plating product number: UF740L
1.Gate
3.Source
ORDERING INFORMATION
Order Number Package Normal Lead Free Plating UF740-TA3-T UF740L-TA3-T TO-220 UF740-TF3-T UF740L-TF3-T TO-220F Note: Pin Assignment: G: GATE D: DRAIN S: SOURCE UF740L-TA3-T (1)Packing Type (2)Package Type (3)Lead Plating (1) T: Tube (2) TA3: TO-220, TF3: TO-220F (3) L: Lead Free Plating, Blank: Pb/Sn Pin Assignment 1 2 3 G D S G D S Packing Tube Tube
www.unisonic.com.tw Copyright (c) 2005 Unisonic Technologies Co., Ltd
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ABSOLUTE MAXIMUM RATINGS (TC = 25 , Unless Otherwise Specified)
PARAMETER Drain to Source Voltage (TJ =25 ~125 ) Drain to Gate Voltage (RGS = 20k) (TJ =25 ~125 ) Gate to Source Voltage Continuous TC = 100 Drain Current Pulsed Maximum Power Dissipation Derating above 25 SYMBOL VDS VDGR VGS ID ID IDM PD RATINGS 400 400 20 10 6.3 40 125 1.0
MOSFET
UNIT V V V A A A W W/
Single Pulse Avalanche Energy Rating 520 mJ EAS (VDD=50V, starting TJ =25 , L=9.1H, RG=25, peak IAS = 10A) Operating Temperature Range TOPR -55 ~ +150 Storage Temperature Range TSTG -55 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER Thermal Resistance Junction-Ambient Thermal Resistance Junction-Case SYMBOL JA Jc RATINGS 62.5 1.0 UNIT /W
ELECTRICAL CHARACTERISTICS (TC =25 , Unless Otherwise Specified.)
PARAMETER Drain to Source Breakdown Voltage Gate to Threshold Voltage On-State Drain Current (Note 1) Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Resistance (Note 1) Forward Transconductance (Note 1) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Gate to Drain "Miller" Charge Input Capacitance Output Capacitance Reverse - Transfer Capacitance SYMBOL TEST CONDITIONS BVDSS VGS = 0V, ID = 250A MIN TYP MAX UNIT 400 2.0 10 4.0 25 250 500 0.47 0.55 5.8 8.9 15 25 52 25 41 6.5 23 1250 300 80 21 41 75 36 63 V V A A A nA S ns ns ns ns nC nC nC pF pF pF
VGS(THR) VGS = VDS, ID = 250A ID(ON) VDS >ID(ON) x RDS(ON)MAX, VGS =10V VDS = Rated BVDSS, VGS = 0V IDSS VDS=0.8 x Rated BVDSS, VGS=0V,TJ=125 IGSS VGS = 20V RDS(ON) gFS tDLY(ON) tR tDLY(OFF) tF QG(TOT) QGS QGD CISS COSS CRSS VGS = 10V, ID = 5.2A VDS 50V, ID = 5.2A VDD = 200V, ID 10A, RGS = 9.1, RL = 20, VGS = 10V MOSFET Switching Times are Essentially Independent of Operating Temperature VGS = 10V, ID = 10A VDS = 0.8 x Rated BVDSS IG(REF) = 1.5mA Gate Charge is Essentially Independent of Operating Temperature VGS = 0V, VDS =25V, f = 1.0MHz
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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ELECTRICAL CHARACTERISTICS(Cont.)
SOURCE TO DRAIN DIODE SPECIFICATIONS Source to Drain Diode Voltage TJ = 25 , ISD = 10A, VGS = 0V VSD (Note 1) Modified MOSFET Continuous Source to Drain IS Symbol Showing Current the Integral Pulse Source to Drain Current Reverse P-N (Note 2) Junction Diode G ISM
MOSFET
2.0
V A
D
10
40
A
S TJ = 25 , ISD = 10A, dISD/dt = 100A/s Reverse Recovery Time tRR TJ = 25 , ISD = 10A, dISD/dt = 100A/s Reverse Recovery Charge QRR NOTES: 1. Pulse Test: Pulse width 300s, Duty Cycle2%. 2. Repetitive rating: Pulse width limited by maximum junction temperature. 3. VDD = 50V, starting TJ = 25 , L = 3.37mH, RG = 25, peak IAS = 10A.
170 1.6
390 4.5
790 8.2
ns C
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www.unisonic.com.tw
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TEST CIRCUITS AND WAVEFORMS
VDS L BVDSS
MOSFET
RG D.U.T.
VDD
IAS
VDS VDD
0.01 IAS Figure 1A. Unclamped Energy Test Circuit
0 tp tAV
Figure 1B. Unclamped Energy Waveforms
VDS RL
90% 10% 90%
RG VDD VGS D.U.T.
0
VGS 10% 0
50%
PULSE WIDTH
50%
tD(ON) tON Figure 2A. Switching Time Test Circuit
tR
t D(OFF) t F t OFF
Figure 2B. Resistive Switching Waveforms
CURRENT REGULATOR 12V BATTERY 50k 0.2F 0.3F D
VDS (ISOLATED SUPPLY) SAME TYPE AS DUT
VDD Q G(TOT) QGS Q GD VGS
VDS G 0 IG(REF) IG CURRENT SAMPLING RESISTOR S I D CURRENT SAMPLING RESISTOR DUT 0 IG(REF) 0
Figure 3A. Gate Charge Test Circuit
Figure 3B. Gate Charge Waveforms
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www.unisonic.com.tw
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TYPICAL PERFORMANCE CUVES (Unless Otherwise Specified)
MOSFET
Forward Bias Safe Operating Area 100
10 s
Output Characteristics 15 12 9 VGS = 5.0V 6 3 0 VGS = 4.5V VGS = 4.0V VGS = 10V VGS = 6.0V PULSE DURATION=80 S DUTY CYCLE = 0.5% MAX VGS = 5.5V
Drain Current, I D (A)
10
100 s
1ms 1
OPERATION IN THIS REGION IS LIMITED BY RDS(ON) TC=25 TJ=MAX RATED SINGLE PULSE
10ms DC
0.1
Drain Current, I D (A)
1
10
102
103
0
40
80
120
160
200
Drain to Source Voltage, VDS (V)
Drain to Source Voltage, VDS (V)
Saturation Characteristics 15 12 9 VGS=5.0V 6 3 0 VGS=4.5V VGS=4.0V 0 2 4 6 8 10
PULSE DURATION=80 S DUTY CYCLE = 0.5% MAX
Transfer Characteristics 100
Drain to Source Current, IDS (ON) (A)
VGS=10V
VGS=6.0V VGS=5.5V
Drain Current, ID (A)
PULSE DURATION=80 S DUTY CYCLE = 0.5% MAX VDS 50V
10
1
T J = 150
T J = 25
0.1
0
2
4
6
8
10
Drain to Source Voltage, VDS (V)
Gate to Source Voltage, VSD (V)
Normalized Drain to Source Breakdown Voltage vs. Junction Temperature 1.25 2500 2000 1500 1000 500 0
Capacitance vs. Drain to Source Voltage
I D=250 A
Normalized Drain to Source Breakdown Voltage
1.05 0.95 0.85 0.75 -60 -40 -20
Capacitance, C (pF)
1.15
VGS=0V, f=1MHz CISS=CGS+C GD CRSS=CGD COSS C DS+CGD CISS
CRSS
COSS
0
20 40 60 80
100120 140 160
1
2
5
10
2
5
102
2
5
103
Junction Temperature, T J ( )
Drain to Source Voltage, VDS (V)
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TYPICAL PERFORMANCE CUVES (Cont.)
MOSFET
Transconduce vs. Drain Current 15 PULSE DURATION=80 S DUTY CYCLE = 0.5% MAX T J = 25 9 6 3 0 0 4 8 12 16 20 Drain Current, ID (A) TJ = 150 100
Source to Drain Diode Voltage PULSE DURATION=80 S DUTY CYCLE = 0.5% MAX
12
Source to Drain Current, ISD (A)
Transconductance, g FS (S)
10 T J = 150 1.0 TJ = 25
0.1
0
0.3
0.6
0.9
1.2
1.5
Source to Drain Voltage, VSD (V)
Drain to Source on Resistance, R DS (ON) ( )
Drain to Source on Resistance vs. Voltage and Drain Current 5 4 3 2 VGS=20V 1 0
Gate to Source Voltage vs. Gate Charge 20
Gate to Source Voltage, VGS (V)
Pulse Duration =80 s Duty Cycle = 0.5% Max
I D=10A VDS=80V
16 12 8 4 0 0 12 36 24 Gate Charge, QG (nC) 48 60
VGS =10V
VDS=200V VDS=320V
25
10
20 30 Drain Current, I D (A)
40
50
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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